Dr. Sameer Kumar Mallik

Postdoctoral Researcher · Chalmers University of Technology · Sweden

Publications: 30 · Citations: 603 · h-index: 13 · i10-index: 18

Identifiers: orcid.org/0000-0001-5819-730X · scholar.google.com/citations?user=aqP9p1kAAAAJ&hl

Publications

• Bipolar Resistive Switching in TiO2 Artificial Synapse Mimicking Pavlov’s Associative Learning — ACS Applied Materials & Interfaces, 2023 doi:10.1021/acsami.2c17228
• Reconfigurable Low-Power TiO2 Memristor for Integration of Artificial Synapse and Nociceptor — ACS Applied Materials & Interfaces, 2023 doi:10.1021/acsami.3c02727
• Multifunctional 2D MoS2 Optoelectronic Artificial Synapse with Integrated Arithmetic and Reconfigurable Logic Operations for In‐Memory Neuromorphic Computing Applications — Advanced Materials Technologies, 2022 doi:10.1002/admt.202201125
• Ionotronic WS2 memtransistors for 6-bit storage and neuromorphic adaptation at high temperature — npj 2D Materials and Applications, 2023 doi:10.1038/s41699-023-00427-8
• Defect-engineered monolayer MoS2 with enhanced memristive and synaptic functionality for neuromorphic computing — Communications Materials, 2024 doi:10.1038/s43246-024-00632-y
• Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning — ACS Applied Materials & Interfaces, 2023 doi:10.1021/acsami.3c06336
• Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor — Journal of Applied Physics, 2021 doi:10.1063/5.0043884
• Electronic bandstructure modulation of MoX2/ZnO(X:S,Se) heterostructure by applying external electric field — Surfaces and Interfaces, 2022 doi:10.1016/j.surfin.2022.101817
• Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device — The Journal of Physical Chemistry Letters, 2021 doi:10.1021/acs.jpclett.1c00121
• Electric Field-Modulated Charge Transfer in Geometrically Tailored MoX2/WX2 (X = S, Se) Heterostructures — The Journal of Physical Chemistry C, 2021 doi:10.1021/acs.jpcc.1c07218
• Strain-mediated ferromagnetism and low-field magnetic reversal in Co doped monolayer WS_2 — Scientific Reports, 2022 doi:10.1038/s41598-022-06346-w
• High Responsivity in Monolayer MoS2 Photodetector via Controlled Interfacial Carrier Trapping — ACS Applied Electronic Materials, 2023 doi:10.1021/acsaelm.2c01567
• Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering — Applied Physics A, 2022 doi:10.1007/s00339-021-05243-9
• Transition metal substituted MoS2/WS2 van der Waals heterostructure for realization of dilute magnetic semiconductors — Journal of Magnetism and Magnetic Materials, 2022 doi:10.1016/j.jmmm.2022.169567
• Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy — Nanotechnology, 2020 doi:10.1088/1361-6528/abb42c
• Polarized Moiré Phonon and Strain-Coupled Phonon Renormalization in Twisted Bilayer MoS2 — The Journal of Physical Chemistry C, 2022 doi:10.1021/acs.jpcc.2c04201
• Analog‐Digital Hybridity of Resistive Switching in Ion‐Irradiated BiFeO 3 Memristor for Synergistic Neuromorphic Functionality and Artificial Learning — Advanced Materials Technologies, 2024 doi:10.1002/admt.202400557
• Ultranarrow Semiconductor WS2 Nanoribbon Field-Effect Transistors — Nano Letters, 2025 doi:10.1021/acs.nanolett.4c01076
• Resonance Raman Process and Exciton Engineering in MoS2-WS2 Vertical Heterostructure — The Journal of Physical Chemistry C, 2025 doi:10.1021/acs.jpcc.5c01463
• Direct Transfer of Monolayer MoS2 Device Arrays for Potential Applications in Flexible Electronics — ACS Applied Nano Materials, 2024 doi:10.1021/acsanm.3c05400