Roshan Padhan
PhD Student · Jackson State University · USA
Publications: 13 · Citations: 126 · h-index: 5 · i10-index: 3
Identifiers: orcid.org/0000-0003-0749-4827 · scholar.google.com/citations?user=bBhUELEAAAAJ&hl=en
Publications
- Ionotronic WS2 memtransistors for 6-bit storage and neuromorphic adaptation at high temperature — npj 2D Materials and Applications, 2023 doi:10.1038/s41699-023-00427-8
- Thermally Driven Multilevel Non-Volatile Memory with Monolayer MoS2 for Brain-Inspired Artificial Learning — ACS Applied Materials & Interfaces, 2023 doi:10.1021/acsami.3c06336
- Analog‐Digital Hybridity of Resistive Switching in Ion‐Irradiated BiFeO 3 Memristor for Synergistic Neuromorphic Functionality and Artificial Learning — Advanced Materials Technologies, 2024 doi:10.1002/admt.202400557
- Resonance Raman Process and Exciton Engineering in MoS2-WS2 Vertical Heterostructure — The Journal of Physical Chemistry C, 2025 doi:10.1021/acs.jpcc.5c01463
- Direct Transfer of Monolayer MoS2 Device Arrays for Potential Applications in Flexible Electronics — ACS Applied Nano Materials, 2024 doi:10.1021/acsanm.3c05400
- Percolative phase transition in few-layered MoSe2 field-effect transistors using Co and Cr contacts — Nanoscale, 2024 doi:10.1039/d4nr03986f
- Unraveling the Mechanism of Interfacial Charge Transfer and Photoresponsivity of WS2 Quantum Dots/MoS2 (0D–2D) Heterostructure-Based Transistors — ACS Applied Materials & Interfaces, 2025 doi:10.1021/acsami.5c09631
- Cerium Oxide Nanoparticles Embedded with Carbon Matrix for a Digital–Analog Integrated Memristor — ACS Applied Materials & Interfaces, 2025 doi:10.1021/acsami.5c19293
- CVD grown bilayer MoS 2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications — Journal of Physics D Applied Physics, 2026 doi:10.1088/1361-6463/ae4ab4
- High-density electrostatic energy storage in a multi-layer P(VDF-TrFE-CFE)/2D mica nanocomposite heterostructure capacitor — Journal of Materials Chemistry A, 2025 doi:10.1039/d5ta06081h
- Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for P N Junctions Operating at Room Temperature — Nano Letters, 2025 doi:10.1021/acs.nanolett.5c04059
- A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances — arXiv, 2023 doi:10.48550/arxiv.2309.08205
- Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning — arXiv, 2023 doi:10.48550/arxiv.2305.02259